mbr20h200ct, MBRF20H200CT & sb20h200ct-1 www.kersemi.com 1 features ? guarding for overvoltage protection ? low power loss, high efficiency ? low forward voltage drop ? high frequency operation ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inverters, freewheeling and polarity protection applications. mechanical data case: to-220ab, ito-220ab, to-262aa epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test mounting torque: 10 in-lbs maximum polarity: as marked primary characteristics i f(av) 2 x 10 a v rrm 200 v i fsm 290 a v f 0.75 v t j 175 c to-262aa mbr20h200ct MBRF20H200CT sb20h200ct-1 case pin 2 pin 1 pin 3 1 1 2 2 3 3 to-220ab 1 2 3 ito-220ab maximum ratings (t c = 25 c unless otherwise noted) parameter symbol mbr20h200ct unit maximum repetitive peak reverse voltage v rrm 200 v working peak reverse voltage v rwm 200 v maximum dc blocking voltage v dc 200 v maximum average forward rectified current total device per diode i f(av) 20 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 290 a peak repetitive reverse current per diode at t p = 2 s, 1 khz i rrm 1.0 a peak non-repetitive reverse surge energy per diode (8/20 s waveform) e rsm 20 mj non-repetitive avalanche energy per diode at 25 c, i as = 2.0 a, l = 10 mh e as 20 mj electrostatic dischar ge capacitor voltage human body model air discharge: c = 100 pf, r 0 1.5 k v c 25 kv voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 65 to + 175 c isolation voltage (ito-220ab only) from terminals to heatsink t = 1 minute v ac 1500 v
mbr20h200ct, MBRF20H200CT & sb20h200ct-1 www.kersemi.com 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t c = 25 c unless otherwise noted) parameter test symbol typ. max. unit maximum instantaneous forward voltage per diode (1) i f = 10 a i f = 10 a i f = 20 a i f = 20 a t c = 25 c t c = 125 c t c = 25 c t c = 125 c v f 0.81 0.65 0.87 0.74 0.88 0.75 0.97 0.85 v maximum reverse current per diode at working peak reverse voltage (1) t j = 25 c t j = 125 c i r 5.0 1.0 a ma typical junction capacitance 4.0 v, 1 mhz c j 250 pf thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol mbr mbrf sb unit typical thermal resistance per diode r jc 2.0 4.0 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab mbr20h200ct-e3/45 2.06 45 50/tube tube ito-220ab MBRF20H200CT-e3/45 2.20 45 50/tube tube to-262aa sb20h200ct-1e3/45 1.58 45 50/tube tube figure 1. forward derating curve (total) 0 5 10 15 20 25 mbrf mbr, mbrb 25 50 75 100 125 150 175 case temperat u re (c) a v erage for w ard c u rrent (a) figure 2. maximum non-repetitive peak forward surge current per diode 0 25 50 75 100 125 150 175 200 225 250 275 300 325 350 1 10 100 nu m b er of cycles at 60 hz a v erage for w ard c u rrent (a)
mbr20h200ct, MBRF20H200CT & sb20h200ct-1 www.kersemi.com 3 figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode 100 10 0.1 1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 125 c t j = 175 c t j = 25 c t j = 75 c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 0.1 0.01 1 10 100 1000 percent of rated peak re v erse v oltage ( % ) 10 000 t j = 125 c t j = 175 c t j = 25 c t j = 75 c 10 20 30 40 50 60 70 8 0 90 100 instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance per diode 100 1000 10 000 0.1 1 10 100 10 re v erse v oltage ( v ) j u nction capacitance (pf) 0.01 10 1 100 10 100 0.1 0.1 1 mbrf mbr, mbrb t - p u lse d u ration (s) transient thermal impedance (c/ w )
mbr20h200ct, MBRF20H200CT & sb20h200ct-1 www.kersemi.com 4 package outline dimensions to-220ab 0.39 8 (10.10) 0.3 8 2 (9.70) 0.055 (1.40) 0.047 (1.20) 0.343 ( 8 .70) typ. 0.067 (1.70) typ. 0.331 ( 8 .40) typ. 0.150 (3. 8 0) 0.139 (3.54) dia. 0.114 (2.90) 0.106 (2.70) 0.634 (16.10) 0.61 8 (15.70) pin 2 3 1 0.11 8 (3.00) typ. 0.035 (0.90) 0.02 8 (0.70) 0.064 (1.62) 0.056 (1.42) 0.200 (5.0 8 ) typ. 0.100 (2.54) typ. 0.63 8 (16.20) 0.59 8 (15.20) 0.055 (1.40) 0.049 (1.25) 0.1 8 5 (4.70) 0.169 (4.30) 0.154 (3.90) 0.13 8 (3.50) 0.370 (9.40) 0.354 (9.00) 0.523 (13.2 8 ) 0.507 (12. 88 ) 0.102 (2.60) 0.0 8 7 (2.20) 1.161 (29.4 8 ) 1.106 (2 8 .0 8 ) 0.024 (0.60) 0.01 8 (0.45) 0.024 (0.60) 0.01 8 (0.45) 0.13 8 (3.50) 0.122 (3.10) 1.29 (3.2 8 ) 1.21 (3.0 8 ) 0.100 (2.54) typ. 0.200 (5.0 8 ) typ. 0.05 8 (1.47) max. 0.024 (0.60) 0.039 (1.00) 0.10 8 (2.74) 0.092 (2.34) 0.117 (2.96) 0.101 (2.56) 0.633 (16.07) 0.601 (15.67) 0.630 (16.00) 0.614 (15.60) dia. 0.320 ( 8 .12) 0.304 (7.72) 0.396 (10.05) 0.372 (9.45) 12 3 pin 0.40 8 (10.36) 0.392 (9.96) ito-220ab 0.270 (6. 88 ) 0.255 (6.4 8 ) 0.264 (6.70) 0.24 8 (6.50) 0.193 (4.90) 0.177 (4.50) 0.370 (9.40) 0.354 (9.00) 0.523 (13.2 8 ) 0.507 (12. 88 ) 0.425 (10. 8 0) 0.393 (10.00) 0.102 (2.60) 0.0 8 7 (2.20) 0.1 8 5 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.024 (0.60) 0.01 8 (0.45) 0.405 (10.2 8 ) 0.3 8 9 (9. 88 ) 0.062 (1.57) 0.054 (1.37) 0.055 (1.40) 0.039 (1.00) 0.4 88 (12.4) 0.472 (12.00) 12 k 3 pin 0.100 (2.54) typ. 0.200 (5.0 8 )typ. 0.02 8 (0.70) 0.035 (0.90) 0.39 8 (10.10) 0.3 8 2 (9.70) to-262aa
|
